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类型：P沟道 漏源电压(Vdss)：
30V 连续漏极电流(Id)：4.3A 功率(Pd)：
1.5W 导通电阻(RDS(on)@Vgs,Id)：
52mΩ@10V,4A 阈值电压(Vgs(th)@Id)：3V@250uA
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 类型 | P沟道 | |
| 漏源电压(Vdss) | 30V | |
| 连续漏极电流(Id) | 4.3A | |
| 功率(Pd) | 1.5W | |
| 导通电阻(RDS(on)@Vgs,Id) | 52mΩ@10V,4A | |
| 阈值电压(Vgs(th)@Id) | 3V@250uA |
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