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Home > Solution > NCE55P30K用于高密度电池设计MOS

NCE55P30K用于高密度电池设计MOS

描述
NCE55P30K使用先进的沟槽技术和设计，以低栅极电荷提供出色的RDS（ON）。 它可以用于多种应用。

一般特征
●VDS = -55V，ID = -30A
     RDS（ON）<40mΩ@ VGS = -10V
●高密度电池设计，超低Rdson
●全面表征雪崩电压和电流
●高EAS的稳定性和均匀性
●出色的封装，散热效果好
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