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Home > Solution > 沟槽型MOS管NCE0115K应用

沟槽型MOS管NCE0115K应用

描述

NCE0115K使用先进的沟槽技术和设计，以低栅极电荷提供出色的RDS（ON）。 它可以用于多种应用中。

 

一般特征

●VDS = 100V，ID = 15A

RDS（ON）<100mΩ@ VGS = 10V

●高密度电池设计，超低Rdson

●全面表征雪崩电压和电流

●高EAS，稳定性好，均匀性好

●出色的封装，散热效果好

●特殊的处理技术可实现高ESD能力
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