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| 产品种类: | MOSFET | |
| 制造商: | STMicroelectronics | |
| RoHS: | ||
| 技术: | Si | |
| 安装风格: | SMD/SMT | |
| 封装 / 箱体: | TO-263-3 | |
| 通道数量: | 1 Channel | |
| 晶体管极性: | N-Channel | |
| Vds-漏源极击穿电压: | 100 V | |
| Id-连续漏极电流: | 120 A | |
| Rds On-漏源导通电阻: | 10.5 mOhms | |
| Vgs - 栅极-源极电压: | 20 V | |
| 最小工作温度: | - 55 C | |
| 最大工作温度: | + 175 C | |
| 封装: | Reel | |
| 通道模式: | Enhancement | |
| 商标: | STMicroelectronics | |
| 配置: | Single | |
| 下降时间: | 68 ns | |
| 正向跨导 - 最小值: | 90 S | |
| 高度: | 4.6 mm | |
| 长度: | 10.4 mm | |
| Pd-功率耗散: | 312 W | |
| 上升时间: | 90 ns | |
| 系列: | STB120NF10 | |
| 工厂包装数量: | 1000 | |
| 晶体管类型: | 1 N-Channel | |
| 类型: | MOSFET | |
| 典型关闭延迟时间: | 132 ns | |
| 典型接通延迟时间: | 25 ns | |
| 宽度: | 9.35 mm | |
| 单位重量: | 4 g |
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