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| 产品种类: | MOSFET | |
| 制造商: | Microsemi | |
| RoHS: | ||
| 技术: | Si | |
| 安装风格: | Through Hole | |
| 封装 / 箱体: | TO-264-3 | |
| 晶体管极性: | N-Channel | |
| Vds-漏源极击穿电压: | 600 V | |
| Id-连续漏极电流: | 94 A | |
| Rds On-漏源导通电阻: | 30 mOhms | |
| Vgs - 栅极-源极电压: | 20 V | |
| Vgs th-栅源极阈值电压: | 3 V | |
| Qg-栅极电荷: | 505 nC | |
| 最小工作温度: | - 55 C | |
| 最大工作温度: | + 150 C | |
| 封装: | Reel | |
| 通道模式: | Enhancement | |
| 商标: | Microsemi | |
| 下降时间: | 8 ns | |
| 高度: | 5.21 mm | |
| 长度: | 26.49 mm | |
| Pd-功率耗散: | 833 W | |
| 上升时间: | 27 ns | |
| 工厂包装数量: | 20 | |
| 典型关闭延迟时间: | 110 ns | |
| 典型接通延迟时间: | 18 ns | |
| 宽度: | 20.5 mm | |
| 单位重量: | 10.600 g |
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