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| 产品种类: | MOSFET | |
| 制造商: | STMicroelectronics | |
| RoHS: | ||
| 技术: | Si | |
| 安装风格: | Through Hole | |
| 封装 / 箱体: | TO-220-3 | |
| 通道数量: | 1 Channel | |
| 晶体管极性: | N-Channel | |
| Vds-漏源极击穿电压: | 600 V | |
| Id-连续漏极电流: | 5 A | |
| Rds On-漏源导通电阻: | 860 mOhms | |
| Vgs - 栅极-源极电压: | 25 V | |
| Vgs th-栅源极阈值电压: | 3 V | |
| Qg-栅极电荷: | 8.8 nC | |
| 最小工作温度: | - 55 C | |
| 最大工作温度: | + 150 C | |
| 封装: | Tube | |
| 商标: | STMicroelectronics | |
| 配置: | Single | |
| 下降时间: | 15.9 ns | |
| Pd-功率耗散: | 20 W | |
| 上升时间: | 7.2 ns | |
| 系列: | MDmesh M2 | |
| 工厂包装数量: | 1000 | |
| 晶体管类型: | 1 N-Channel | |
| 典型关闭延迟时间: | 19.3 ns | |
| 典型接通延迟时间: | 7.6 ns | |
| 单位重量: | 330 mg |
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