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| 产品种类: | MOSFET | |
| 制造商: | STMicroelectronics | |
| RoHS: | ||
| 技术: | Si | |
| 安装风格: | Through Hole | |
| 封装 / 箱体: | TO-220-3 | |
| 通道数量: | 1 Channel | |
| 晶体管极性: | N-Channel | |
| Vds-漏源极击穿电压: | 620 V | |
| Id-连续漏极电流: | 2.7 A | |
| Rds On-漏源导通电阻: | 2.5 Ohms | |
| Vgs - 栅极-源极电压: | 30 V | |
| Qg-栅极电荷: | 13 nC | |
| 最小工作温度: | - 55 C | |
| 最大工作温度: | + 150 C | |
| 封装: | Tube | |
| 通道模式: | Enhancement | |
| 商标: | STMicroelectronics | |
| 配置: | Single | |
| 下降时间: | 15.6 ns | |
| 高度: | 9.3 mm | |
| 长度: | 10.4 mm | |
| Pd-功率耗散: | 45 W | |
| 上升时间: | 6.8 ns | |
| 系列: | N-channel MDmesh | |
| 工厂包装数量: | 1000 | |
| 晶体管类型: | 1 N-Channel | |
| 典型关闭延迟时间: | 22 ns | |
| 典型接通延迟时间: | 9 ns | |
| 宽度: | 4.6 mm | |
| 单位重量: | 330 mg |
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