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| 产品种类: | 射频(RF)双极晶体管 | |
| 制造商: | Advanced Semiconductor, Inc. | |
| RoHS: | ||
| 晶体管类型: | Bipolar | |
| 技术: | Si | |
| 晶体管极性: | NPN | |
| 直流集电极/Base Gain hfe Min: | 5 | |
| 集电极—发射极最大电压 VCEO: | 30 V | |
| 发射极 - 基极电压 VEBO: | 3.5 V | |
| 集电极连续电流: | 400 mA | |
| 最大工作温度: | + 200 C | |
| 安装风格: | SMD/SMT | |
| 封装 / 箱体: | SOIC-8 | |
| 封装: | Tray | |
| 商标: | Advanced Semiconductor, Inc. | |
| 最小工作温度: | - 55 C | |
| 工作频率: | 200 MHz | |
| Pd-功率耗散: | 1 W | |
| 工厂包装数量: | 1 | |
| 类型: | RF Bipolar Small Signal | |
| 单位重量: | 540 mg |
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