Your shopping cart is empty! Please select the type which you want.
| 产品种类: | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 | |
| 制造商: | Microsemi | |
| RoHS: | ||
| 晶体管极性: | N-Channel | |
| Id-连续漏极电流: | 20 A | |
| Vds-漏源极击穿电压: | 260 V | |
| 技术: | Si | |
| 增益: | 28 dB | |
| 输出功率: | 350 W | |
| 最大工作温度: | + 150 C | |
| 封装: | Reel | |
| 商标: | Microsemi | |
| 正向跨导 - 最小值: | 8 mS | |
| 最小工作温度: | - 65 C | |
| 工作频率: | 30 MHz | |
| 工作温度范围: | - 65 C to + 150 C | |
| Pd-功率耗散: | 648 W | |
| 工厂包装数量: | 1 | |
| 类型: | RF Power MOSFET | |
| Vgs - 栅极-源极电压: | 40 V | |
| Vgs th-栅源极阈值电压: | 3.6 V |
Follow the public account to send surprise benefits
Enterprise QQ: 2885770488
operating hours: Monday to Friday 8:30-18:00
